Sputter Deposition

HV Sputtering

AJA Orion 8

The AJA Orion 8 Sputtering System is capable of depositing metal and insulating films with RF generators and three DC generators. Each sputtering sources has integral isolation chimneys, pneumatic shutters and individual gas injection capability. The tool is equipped with a load lock and sputtering chamber with manual sample transfer and computer-controlled deposition. Reactive sputtering with oxygen also available as well. Substrate holder mounts to top of and accommodates substrates up to 4″ diameter. It has continuous motorized rotation (0-40RPM) with controller and radiant heating to 850° C with quartz halogen lamps. Substrate lift for load-lock transfer and working distance adjustment via edge welded bellows also possible.

System Specifications:

  • Process Gases: Ar (0 – 50 sccm) and O2 (0 – 20 sccm)
    • RF-Magnetron: 300 Watts maximum
    • DC-Magnetron: 750 Watts maximum
    • Available targets: Available Targets: Au, Pd, Ti, Cr, ITO, ZnO
    • Load-lock pressure: 3.8 x 10-6 Torr and Process chamber pressure: 4.8 x 10-8 Torr

UHV Sputtering

ATC-2200-UHV

 AJA Orion 8

The AJA ATC-2200-UHV Sputtering System is capable of depositing metal and insulating films with seven 2 inch and one 4 inch magnetron sputtering sources. Each sputtering sources has integral isolation chimneys, pneumatic shutters and individual gas injection capability via port on cluster flange. The tool is equipped with a load lock and sputtering chamber with manual sample transfer and computer-controlled deposition. Reactive sputtering with Nitrogen also available as well. Substrate holder mounts to top of chamber for sputter up orientation and accommodates substrates up to 4″ diameter. It has continuous motorized rotation (0-40RPM) with controller and radiant heating to 850° C with quartz halogen lamps. Substrate lift for load-lock transfer and working distance adjustment via edge welded bellows also possible.

System Specifications:

  • Process Gases: Ar (0 – 50 sccm) and N2 (0 – 20 sccm)
    • RF-Magnetron: 600 Watts maximum
    • DC-Magnetron: 1500 Watts maximum
    • Available targets: Available Targets: NbTi, Ta, Al, Ti and SiO2
    • Load-lock pressure: 3.8 x 10-6 Torr and Process chamber pressure: 2 x 10-9 Torr